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| CXG1134EN High Power SPDT Switch with Logic Control Description The CXG1134EN is a high power and high Isolation SPDT switch MMIC. This IC can be used in wireless communication systems. The CXG1134EN can be operated by one CMOS control line. The Sony GaAs J-FET process is used for low insertion loss and on-chip logic circuit. Features * Low insertion loss: 0.25dB @900MHz, 0.35dB @1.9GHz * High linearity: IIP3 (typ.) = 70dBm * 1 CMOS compatible control line * Small package size: 10-pin VSON Applications * Cellular handsets * PDC, CDMA Structure GaAs J-FET MMIC Absolute Maximum Ratings (Ta = 25C) * Bias voltage VDD 7 * Control voltage * Operating temperature * Storage temperature Vctl Topr Tstg 5 -35 to +85 -65 to +150 10 pin VSON (Plastic) V V C C GaAs MMICs are ESD sensitive devices. Special handling precautions are required. Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. -1- E02330-PS CXG1134EN Block Diagram and Recommended Circuit GND (recommended) Rctl (1k ) CTL Cbypass (100pF) GND 7 4 CRF (100pF) GND 8 F1 F2 3 GND 6 5 Cbypass (100pF) VDD RF1 GND 9 F3 10 F4 2 GND RF2 CRF (100pF) 1 CRF (100pF) GND (recommended) RF3 When using this IC, the following external parts should be used: Rctl: This resistor is used to improve ESD performance. 1k is recommended. This capacitor is used for RF de-coupling and must be used for all applications. CRF: 100pF is recommended. Cbypass: This capacitor is used for DC line filtering. 100pF is recommended. Truth Table On Pass RF1 - RF2 RF1 - RF3 CTL H L F1 ON OFF F2 ON F3 ON F4 ON OFF OFF OFF DC Bias Condition Item Vctl (H) Vctl (L) VDD Min. 2.2 0 2.7 Typ. 3.0 -- 3.0 Max. 3.6 0.4 3.6 (Ta = 25C) Unit V V V -2- CXG1134EN Electrical Characteristics Item Insertion loss Isolation VSWR Harmonics 1dB compression input power Switching speed Control current Bias current Symbol IL ISO. VSWR 2fo 3fo P1dB TSW Ictl IDD Vctl (High) = 3V VDD = 3V 900MHz 900MHz 900MHz 1 1 VDD = 3.0V, 0/3V control 32 28 Condition Min. Typ. 0.25 32 1.2 -75 -75 35 2 10 50 (Ta = 25C) Max. 0.50 1.4 -60 -60 5 30 100 Unit dB dB -- dBc dBc dBm s A A 1 Pin = 30dBm, 900MHz, VDD = 3.0V, 0/3V control -3- CXG1134EN Package Outline Unit: mm 10PIN VSON(PLASTIC) + 0.1 0.8 - 0.05 0.6 2.5 A 10 6 S 0.05 S 0.35 0.1 2.5 B PIN 1 INDEX 1 0.4 0.8 5 x2 0.15 S B x4 0.15 S A B 0.35 0.1 Solder Plating 0.13 0.025 + 0.09 0.14 - 0.03 TERMINAL SECTION NOTE: 1) The dimensions of the terminal section apply to the ranges of 0.1mm and 0.25mm from the end of a terminal. PACKAGE STRUCTURE PACKAGE MATERIAL SONY CODE EIAJ CODE JEDEC CODE VSON-10P-01 LEAD TREATMENT LEAD MATERIAL PACKAGE MASS EPOXY RESIN SOLDER PLATING COPPER ALLOY 0.013g LEAD PLATING SPECIFICATIONS ITEM LEAD MATERIAL SOLDER COMPOSITION PLATING THICKNESS SPEC. COPPER ALLOY Sn-Bi Bi:1-4wt% 5-18m 0.03 0.03 (Stand Off) 0.2 0.01 0.05 M S AB 0.225 0.03 -4- Sony Corporation 0.5 0.2 2.7 |
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